日本午夜小视频,天天干夜夜爽天天操夜夜爽视频,国产精品免费小视频,a级片网,乌克兰美女性感视频,久草免费在线美女视频,美女视频全是黄的免费看

CN EN
Home
About Us
Newpros
1200V 80 mΩ SIC MOSFET
1200V 80 mΩ SIC MOSFET Back
 PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.
Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.
SPECIFICATION

YJD212080NCFG1

Related new products

N30V Trench MOSFET for PD VBUS

N150V MOSFET for Industrial Control

Small signal SOT-723 new package

1200V 40mΩ SiC MOSFET

SOD-123HE TVS Diode

TOLL Package SiC MOSFET

650V Super Junction N-Channel MOSFET

DFN1006-3L Package Small Signal Device

MMBZ Series ESD with Voltage Regulation Characteristics

JC