日本午夜小视频,天天干夜夜爽天天操夜夜爽视频,国产精品免费小视频,a级片网,乌克兰美女性感视频,久草免费在线美女视频,美女视频全是黄的免费看

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

N40V SGT MOSFET for Automotive Motor Drives

Optimization Design of Rectifier Bridge —— New Package GBU-L

IGBT high frequency series C1 module

JC

High junction temperature ultrafast recovery diode

Small Signal Schottky and Switching Diode in DFN0603 Package

SOD-323FL Schottky

YBS2G Gulling Patch Rectifier Bridge

ESD Products for Panel Ports

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode